Two Level Undercut-Profile Substrate-Based Filamentary Coated Conductors Produced Using Metal Organic Chemical Vapor Deposition

Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). The surface morphology and structur...

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

We demonstrate an in situ mask removal technique for use in selective area epitaxy (SAE) by metal organic chemical vapor deposition (MOCVD). The mask material is native aluminum oxide (AlxOy) formed by wet thermal oxidation of a thin AlGaAs layer. The AlxOy layer is patterned using standard photolithography and wet chemistry outside of chamber. The AlxOy layer forms a high-quality, pin-holefree...

Modeling and characterization of InAs/GaAs quantum dot lasers grown using metal organic chemical vapor deposition

We report on the lasing characteristics of threeand five-stack InAs/GaAs quantum dot QD lasers grown by metal organic chemical vapor deposition. By increasing the number of stacked dot layers to 5, lasing was achieved from the ground state at 1135 nm for device lengths as short as 1.5 mm no reflectivity coatings . The unamplified spontaneous emission and Z ratio as a function of injection curre...

Deep Level States in P-type GaN Grown by Ammonia-based Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition